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AFT05MS004Nt1 1 rf device data freescale semiconductor, inc. rf power ldmos transistor high ruggedness n--channel enhancement--mode lateral mosfet designed for handheld two--way radio applications with frequencies from 136 to 941 mhz. the high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. narrowband performance (7.5 vdc, t a =25 ? c, cw) frequency (mhz) g ps (db) ? d (%) p out (w) 520 (1) 20.9 74.9 4.9 wideband performance (7.5 vdc, t a =25 ? c, cw) frequency (mhz) p in (w) g ps (db) ? d (%) p out (w) 136?174 (2) 0.10 17.8 61.8 6.1 350?520 (3) 0.12 15.4 49.4 4.2 load mismatch/ruggedness frequency (mhz) signal type vswr p in (w) test voltage result 435 (3) cw > 65:1 at all phase angles 0.24 (3 db overdrive) 9.0 no device degradation 1. measured in 520 mhz narrowband test circuit. 2. measured in 136?174 mhz vhf broadband reference circuit. 3. measured in 350?520 mhz uhf broadband reference circuit. features ? characterized for operation from 136 to 941 mhz ? unmatched input and output allowing wide frequency range utilization ? integrated esd protection ? integrated stab ility enhancements ? wideband ? full power across the band ? exceptional thermal performance ? extreme ruggedness ? in tape and reel. t1 suffix = 1,000 units, 12 mm tape width, 7--inch reel. typical applications ? output stage vhf band handheld radio ? output stage uhf band handheld radio ? output stage for 700?800 mhz handheld radio ? driver for 10?1000 mhz applications document number: AFT05MS004N rev. 0, 7/2014 freescale semiconductor technical data 136?941 mhz, 4 w, 7.5 v wideband rf power ldmos transistor AFT05MS004Nt1 sot--89 figure 1. pin connections source gate source drain 2 23 1 ? freescale semiconductor, inc., 2014. a ll rights reserved.
2 rf device data freescale semiconductor, inc. AFT05MS004Nt1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +30 vdc gate--source voltage v gs ?6.0, +12 vdc operating voltage v dd 12.5, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +150 ? c total device dissipation @ t c =25 ? c derate above 25 ? c p d 28 0.23 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 79 ? c, 4.0 w cw, 7.5 vdc, i dq = 100 ma, 520 mhz r ? jc 4.4 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1c, passes 1000 v machine model (per eia/jesd22--a115) a, passes 100 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 1 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =30vdc,v gs =0vdc) i dss ? ? 2 ? adc zero gate voltage drain leakage current (v ds =7.5vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 500 nadc on characteristics gate threshold voltage (v ds =10vdc,i d =67 ? adc) v gs(th) 1.7 2.2 2.5 vdc drain--source on--voltage (v gs =10vdc,i d = 700 madc) v ds(on) ? .22 ? vdc forward transconductance (v ds =7.5vdc,i d =4.0adc) g fs ? 4.0 ? s dynamic characteristics reverse transfer capacitance (v ds =7.5vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 1.63 ? pf output capacitance (v ds =7.5vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 34.8 ? pf input capacitance (v ds =7.5vdc,v gs =0vdc ? 30 mv(rms)ac @ 1 mhz) c iss ? 57.6 ? pf 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. (continued)
AFT05MS004Nt1 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (in freescale narrowband test fixture, 50 ohm system) v dd =7.5vdc,i dq = 100 ma, p in =16dbm,f=520mhz common--source amplifier output power p out ? 4.9 ? w drain efficiency ? d ? 74.9 ? %
4 rf device data freescale semiconductor, inc. AFT05MS004Nt1 typical characteristics 160 10 9 90 10 7 100 120 130 mttf (hours) 140 150 10 6 10 8 t j , junction temperature ( ? c) note: mttf value represents the total cumulative operating time under indicated test conditions. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. v dd =7.5vdc 2 1 100 08 4 v ds , drain--source voltage (volts) figure 2. capacitance versus drain--source voltage c, capacitance (pf) 12 c iss 10 10 c oss measured with ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc c rss 6 figure 3. mttf versus junction temperature ? cw i d =0.62amps 0.77 amps 0.91 amps 110
AFT05MS004Nt1 5 rf device data freescale semiconductor, inc. 520 mhz narrowband production test fixture c12 c11 c10 v dd v gg c9 c13 c14 c8 c16 r5 r6 c4 l1 l2 c7 c6 c5 c3 c2 c1 r4 r3 r2 r1 c15 AFT05MS004N rev. 0 d57923 figure 4. AFT05MS004Nt1 narrowband test circuit component layout ? 520 mhz b1 table 6. AFT05MS004Nt1 narrowband test circui t component designations and values ? 520 mhz part description part number manufacturer b1 rf bead, short 2743019447 fair--rite c1 22 ? f, 35 v tantalum capacitor t491x226k035at kemet c2, c11 0.1 ? f chip capacitors cdr33bx104akws avx c3, c10 0.01 ? f chip capacitors c0805c103k5rac kemet c4, c9 180 pf chip capacitors atc100b181jt300xt atc c5 11 pf chip capacitor atc100b110jt500xt atc c6, c7 13 pf chip capacitors atc100b130jt500xt atc c8, c15 2.2 pf chip capacitors atc100b2r2jt500xt atc c12 330 ? f, 35 v electrolytic capacitor mcgpr35v337m10x16--rh multicomp c13, c14 16 pf chip capacitors atc100b160jt500xt atc c16 9.1 pf chip capacitor atc100b9r1ct500xt atc l1 8.0 nh, 3 turn inductor a03tklc coilcraft l2 5 nh, 2 turn inductor a02tklc coilcraft r1, r2, r3, r4, r5 1.5 ? , 1/4 w chip resistors rc1206fr--071r5l yageo r6 27 ? , 1/4 w chip resistor crcw120627r0fkea vishay pcb rogers ro4350, 0.030 ? , ? r =3.66 d57923 mtl
6 rf device data freescale semiconductor, inc. AFT05MS004Nt1 rf input rf output r6 z4 z3 c5 z1 z2 z5 z8 l1 v supply v bias z10 z9 z11 c16 z12 c2 c3 c6 c9 c10 c11 c1 + c12 + z6 c7 z7 c13 c14 z13 l2 z14 c8 z15 z16 c4 r1 r2 r3 r4 r5 b1 dut c15 z1 0.328 ?? 0.080 ? microstrip z2 0.490 ?? 0.120 ? microstrip z3 0.055 ?? 0.320 ? microstrip z4 0.555 ?? 0.320 ? microstrip z5 0.160 ?? 0.320 ?? 0.620 ? taper microstrip z6 0.045 ?? 0.620 ? microstrip z7 0.387 ?? 0.620 ? microstrip z8 0.273 ?? 0.620 ? microstrip z9 0.708 ?? 0.620 ? microstrip z10 0.062 ?? 0.620 ? microstrip z11 0.162 ?? 0.620 ?? 0.320 ? taper microstrip z12 0.377 ?? 0.320 ? microstrip z13 0.055 ?? 0.320 ? microstrip z14 0.587 ?? 0.120 ? microstrip z15 0.078 ?? 0.120 ? microstrip z16 0.238 ?? 0.080 ? microstrip figure 5. AFT05MS004Nt1 narrowband test circuit schematic ? 520 mhz table 7. AFT05MS004Nt1 narrowband test circuit microstrips ? 520 mhz description microstrip description microstrip
AFT05MS004Nt1 7 rf device data freescale semiconductor, inc. typical characteristics ? 520 mhz narrowband reference circuit p out , output power (watts) 0 123 2 1 3 p out , output power (watts) 4 1.5 2.5 3.5 6 v dd =7.5vdc,f=520mhz p in =0.04w v gs , gate--source voltage (volts) figure 6. output power versus gate--source voltage figure 7. power gain, drain efficiency and output power versus input power p in , input power (watts) g ps , power gain (db) 0 6 3 0 ? d g ps 30 50 40 10 20 15 12 9 18 60 70 80 0.02 ? d , drain efficiency (%) p out v dd =7.5vdc,i dq = 100 ma f = 520 mhz p in =0.02w 5 21 24 0.04 0.06 0.08 0.1 90 v dd =7.5vdc,i dq = 100 ma, p out =4w f mhz z source ? z load ? 520 1.35 + j2.15 2.10 + j1.70 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 8. narrowband series equivalent source and load impedance ? 520 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
8 rf device data freescale semiconductor, inc. AFT05MS004Nt1 136?174 mhz vhf bro adband reference circuit table 8. 136?174 mhz vhf broadband performance (in freescale reference circuit, 50 ohm system) v dd =7.5volts,i dq = 100 ma, t a =25 ? c, cw frequency (mhz) p in (w) g ps (db) ? d (%) p out (w) 135 0.10 17.8 62.3 6.0 155 0.06 20.2 69.1 6.0 175 0.10 17.9 61.8 6.0 table 9. load mismatch/ruggedness (in freescale reference circuit) frequency (mhz) signal type vswr p in (w) test voltage, v dd result 155 cw > 65:1 at all phase angles 0.2 (3 db overdrive) 9.0 no device degradation
AFT05MS004Nt1 9 rf device data freescale semiconductor, inc. 136?174 mhz vhf bro adband reference circuit figure 9. AFT05MS004Nt1 vhf broadband refe rence circuit compone nt layout ? 136?174 mhz j 1 q1 c11 c12 c10 c9 l6 c8 l5 c7 l3 l4 c16 c17 c18 r1 l2 c13 c14 c15 c1 c2 c3 c4 c5 c6 l1 d61839 AFT05MS004N rev. 0 (136 ? 174 mhz) table 10. AFT05MS004Nt1 vhf broa dband reference circu it component designati ons and values ? 136?174 mhz part description part number manufacturer c1, c10, c14, c17 1 nf chip capacitors 2012x7r2e102m tdk c2 39 pf chip capacitor atc600f390jt250xt atc c3, c8 56 pf chip capacitors atc600f560jt250xt atc c4, c5 68 pf chip capacitors atc600f680jt250xt atc c6, c15, c16 100 pf chip capacitors atc600f101jt250xt atc c7 150 pf chip capacitor atc600f151jt250xt atc c9 8.2 pf chip capacitor atc600f8r2bt250xt atc c11, c12 10 ? f, 50 v electrolytic capacitors uvr1h100mdd nichicon c13, c18 1 ? f chip capacitors grm21br71h105ka12l murata j1 breakaway header, right--angle 3 pins 22-28-8360 molex l1 13.7 nh inductor 0807sq14n coilcraft l2 12.3 nh inductor 0806sq12n coilcraft l3, l4 25.0 nh inductors 0908sq25n coilcraft l5 15.7 nh inductor 0806sq16n coilcraft l6 27.3 nh inductor 0908sq27n coilcraft q1 rf power ldmos transistor AFT05MS004Nt1 freescale r1 33 ? , 1/10 w chip resistor crcw080533r0jnea vishay pcb 0.020 ? , ? r = 4.8, fr4 (s--1000) d61839 mtl
10 rf device data freescale semiconductor, inc. AFT05MS004Nt1 figure 10. AFT05MS004Nt1 vhf broadband reference circuit schematic ? 136?174 mhz table 11. AFT05MS004Nt1 vhf broadband reference circuit microstrips ? 136?174 mhz description microstrip description microstrip z16 0.015 ?? 0.170 ? microstrip z17* 0.357 ?? 0.050 ? microstrip z18 0.010 ?? 0.050 ? microstrip z19 0.010 ?? 0.050 ? microstrip z20 0.010 ?? 0.050 ? microstrip z21 0.010 ?? 0.050 ? microstrip z22 0.120 ?? 0.050 ? microstrip z1 0.120 ?? 0.050 ? microstrip z2 0.142 ?? 0.050 ? microstrip z3 0.010 ?? 0.050 ? microstrip z4 0.012 ?? 0.050 ? microstrip z5 0.010 ?? 0.050 ? microstrip z6* 0.010 ?? 0.050 ? microstrip z7 0.012 ?? 0.040 ? microstrip z8 0.265 ?? 0.040 ? microstrip z9 0.070 ?? 0.300 ? microstrip z10 0.032 ?? 0.300 ? microstrip z11 0.070 ?? 0.140 ? microstrip z12 0.070 ?? 0.140 ? microstrip z13 0.015 ?? 0.170 ? microstrip z14 0.030 ?? 0.084 ? microstrip z15 0.040 ?? 0.040 ? microstrip description microstrip rf input v bias v supply c16 rf output c10 z20 z19 l3 z12 c15 z4 z3 c1 z2 z1 c2 l1 z5 c3 z6 c4 z7 z9 r1 z10 z13 z14 z15 z16 c7 z17 l5 z18 l4 l6 c9 c8 z8 dut c5 c6 l2 c14 c13 c11 z11 c17 c18 c12 z21 z22 * line length includes microstrip bends + +
AFT05MS004Nt1 11 rf device data freescale semiconductor, inc. typical characteristics ? 136?174 mhz vhf broadband reference circuit 135 g ps f, frequency (mhz) figure 11. power gain, drain efficiency and output power versus frequency at a constant p in 13 22 4 90 80 70 60 7 6 5 ? d , drain efficiency (%) ? d g ps , power gain (db) 20 18 14 150 165 170 50 p out ,output power (watts) v dd =7.5vdc p in =0.1w i dq = 100 ma p out 19 17 16 15 155 140 175 21 145 160 8 0 0 v gs , gate--source voltage (volts) figure 12. output power versus gate--source voltage 6 0.5 1.5 2 3 5 1 p out , output power (watts) f = 155 mhz v dd =7.5vdc,p in =0.1w 0 0 detail a 0.5 1.5 f = 155 mhz detail a v dd =7.5vdc p in =0.05w p out , output power (watts) v gs , gate--source voltage (volts) 3 v dd =7.5vdc,p in =0.05w 0.2 v dd =7.5vdc p in =0.1w 2.5 1 0.4 1 3.5 2 4 1 2.5 2 0.6 0.8 3 figure 13. power gain, drain efficiency and output power versus input power and frequency p in , input power (watts) g ps , power gain (db) 12 15 14 0.01 0.3 g ps 4 0 2 18 17 16 19 20 60 80 0.1 p out v dd =7.5vdc i dq = 100 ma 13 155 mhz 135 mhz 155 mhz 175 mhz 175 mhz 135 mhz ? d 155 mhz 135 mhz p out ,output power (watts) 20 25 10 9 50 40 10 1 ? d , drain efficiency (%) 11 21 22 23 24 7 6 5 8 30 70 175 mhz
12 rf device data freescale semiconductor, inc. AFT05MS004Nt1 136?174 mhz vhf bro adband reference circuit z o =25 ? z source z load f = 175 mhz f = 135 mhz f = 135 mhz f = 175 mhz v dd =7.5vdc,i dq = 100 ma, p out =4w f mhz z source ? z load ? 135 7.02 + j13.05 2.24 - j1.21 140 8.07 + j13.00 2.42 - j0.87 145 9.05 + j12.43 2.56 - j0.54 150 9.68 + j11.26 2.79 - j0.24 155 9.16 + j9.82 3.08 - j0.07 160 7.39 + j9.21 3.23 - j0.03 165 5.83 + j10.15 3.52 - j0.09 170 5.09 + j11.62 3.77 - j0.01 175 5.06 + j12.97 3.40 - j0.27 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 14. vhf broadband series equivalent source and load impedance ? 136?174 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
AFT05MS004Nt1 13 rf device data freescale semiconductor, inc. 350?520 mhz uhf bro adband reference circuit table 12. 350?520 mhz uhf broadband performance (in freescale reference circuit, 50 ohm system) v dd =7.5volts,i dq =50ma,t a =25 ? c, cw frequency (mhz) p in (w) g ps (db) ? d (%) p out (w) 350 0.11 15.5 48.7 4.0 470 0.04 19.8 67.7 4.0 520 0.09 16.3 71.1 4.0 table 13. load mismatch/ruggedness (in freescale reference circuit) frequency (mhz) signal type vswr p in (w) test voltage, v dd result 435 cw > 65:1 at all phase angles 0.24 (3 db overdrive) 9.0 no device degradation
14 rf device data freescale semiconductor, inc. AFT05MS004Nt1 350?520 mhz uhf bro adband reference circuit c1 l1 l2 c3 c2 c4 c5 r1 r2 c6 b1 b2 c7 l3 c8 c9 l4 l5 c10 c12 c11 j1 figure 15. AFT05MS004Nt1 uhf broadband refe rence circuit compone nt layout ? 350?520 mhz d56664 AFT05MS004N rev. 0 (350 ? 520 mhz) q1 table 14. AFT05MS004Nt1 uhf broadba nd reference circuit component designations and values ? 350?520 mhz part description part number manufacturer b1, b2 rf beads 2743019447 fair--rite c1, c10 18 pf chip capacitors gqm2195c2e180fb12d murata c5, c8, c12 100 pf chip capacitors gqm2195c2e101gb12d murata c2, c3 15 pf chip capacitors gqm2195c2e150fb12d murata c4 56 pf chip capacitor gqm2195c2e560gb12d murata c6 1 ? f chip capacitor grm31cr72a105ka01l murata c7 10 ? f chip capacitor grm31cr61h106ka12l murata c9 39 pf chip capacitor gqm2195c2e390gb12d murata c11 5.1 pf chip capacitor gqm2195c2e5r1bb12d murata j1 breakaway header, right--angle 3 pins 22-28-8360 molex l1, l2 5.5 nh inductors 0806sq5n5 coilcraft l3 16.6 nh inductor 0908sq17n coilcraft l4 2.55 nh inductor 0906--3jlc coilcraft l5 8.1 nh inductor 0908sq8n1 coilcraft q1 rf power ldmos transistor AFT05MS004Nt1 freescale r1, r2 22 ? , 1/10 w chip resistors rr1220q--220--d susumu pcb 0.020 ? , ? r = 4.8, fr4 (s--1000) d56664 mtl
AFT05MS004Nt1 15 rf device data freescale semiconductor, inc. z9 0.140 ?? 0.060 ? microstrip z10 0.065 ?? 0.034 ? microstrip z11 0.057 ?? 0.300 ? microstrip z12 0.070 ?? 0.140 ? microstrip z13 0.070 ?? 0.140 ? microstrip z14 0.057 ?? 0.170 ? microstrip z15 0.140 ?? 0.060 ? microstrip z16 0.200 ?? 0.034 ? microstrip figure 16. AFT05MS004Nt1 uhf broadband reference circuit schematic ? 350?520 mhz table 15. AFT05MS004Nt1 uhf broadband reference circuit microstrips ? 350?520 mhz description microstrip description microstrip z17 0.190 ?? 0.170 ? microstrip z18 0.150 ?? 0.050 ? microstrip z19* 0.270 ?? 0.050 ? microstrip z20 0.070 ?? 0.050 ? microstrip z21 0.070 ?? 0.050 ? microstrip z22 0.050 ?? 0.050 ? microstrip z23 0.050 ?? 0.050 ? microstrip z24 0.150 ?? 0.050 ? microstrip z1 0.150 ? x 0.050 ? microstrip z2 0.090 ?? 0.050 ? microstrip z3 0.070 ?? 0.050 ? microstrip z4 0.070 ?? 0.050 ? microstrip z5* 0.090 ?? 0.050 ? microstrip z6* 0.160 ?? 0.050 ? microstrip z7 0.260 ?? 0.050 ? microstrip z8 0.095 ?? 0.300 ? microstrip description microstrip * line length includes microstrip bends v bias v supply c8 rf output z24 c12 z14 c5 z5 z6 z7 c3 z12 r1 z17 z18 z19 z23 c4 z9 b1 c6 z13 z15 l3 b2 c7 c9 z10 z16 dut z4 z3 c1 z2 z1 l1 c2 l2 rf input z8 z11 r2 z20 z21 l4 z22 l5 c11 c10
16 rf device data freescale semiconductor, inc. AFT05MS004Nt1 typical characteristics ? 350?520 mhz uhf broadband reference circuit 340 g ps f, frequency (mhz) figure 17. power gain, drain efficiency and output power versus frequency at a constant at a constant p in 12 20 3 80 70 60 50 6 5 4 ? d , drain efficiency (%) ? d g ps , power gain (db) 19 17 13 400 420 520 40 p out ,output power (watts) v dd =7.5vdc p in =0.12w i dq =50ma p out 18 16 15 14 440 380 540 360 460 480 500 11 7 0 0 v gs , gate--source voltage (volts) figure 18. output power versus gate--source voltage 6 0.5 1 1.5 2 5 1 4 2 p out , output power (watts) f = 435 mhz v dd =7.5vdc,p in =0.12w 0 0 detail a 1 1.5 f = 435 mhz detail a v dd =7.5vdc p in =0.06w p out , output power (watts) v gs , gate--source voltage (volts) 3 v dd =7.5vdc,p in =0.06w 0.2 v dd =7.5vdc p in =0.12w 2 0.5 0.4 0.6 1.0 0.8 3 2.5 figure 19. power gain, drain efficiency and output power versus input power and frequency p in , input power (watts) g ps , power gain (db) 12 15 14 0.01 0.3 g ps 6 0 3 22 21 20 23 40 70 80 0.1 p out v dd =7.5vdc i dq =50ma 13 520 mhz 520 mhz ? d 435 mhz 520 mhz p out ,output power (watts) 24 25 11 10 60 50 30 4 2 ? d , drain efficiency (%) 16 17 18 19 435 mhz 1 5 7 20 10 435 mhz 350 mhz 350 mhz 350 mhz
AFT05MS004Nt1 17 rf device data freescale semiconductor, inc. 350?520 mhz uhf bro adband reference circuit z o =5 ? z load f = 520 mhz f = 350 mhz f = 350 mhz f = 520 mhz z source v dd =7.5vdc,i dq =50ma,p out =4w f mhz z source ? z load ? 350 2.27 - j1.72 3.55 + j1.20 360 2.41 - j1.91 3.61 + j0.92 370 2.55 - j2.11 3.66 + j0.64 380 2.68 - j2.31 3.71 + j0.36 390 2.74 - j2.38 3.71 + j0.15 400 2.76 - j2.36 3.69 + j0.02 410 2.77 - j2.35 3.66 + j0.18 420 2.78 - j2.35 3.67 + j0.34 430 2.78 - j2.43 3.82 + j0.48 440 2.79 - j2.50 3.97 + j0.62 450 2.79 - j2.57 4.13 + j0.76 460 2.44 - j2.70 4.00 + j0.95 470 2.02 - j2.84 3.80 + j1.15 480 1.59 - j2.98 3.61 + j1.36 490 1.37 - j3.20 3.53 + j1.46 500 1.45 - j3.53 3.62 + j1.41 510 1.52 - j3.86 3.71 + j1.36 520 1.60 - j4.19 3.80 + j1.31 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 20. uhf broadband series equivalent source and load impedance ? 350?520 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
18 rf device data freescale semiconductor, inc. AFT05MS004Nt1 figure 21. pcb pad layout for sot--89a 4.35 3.00 2x 45 ? 3x 0.70 2x 1.50 0.85 2x 1.25 1.90 figure 22. product marking aft504 awlywz
AFT05MS004Nt1 19 rf device data freescale semiconductor, inc. package dimensions
20 rf device data freescale semiconductor, inc. AFT05MS004Nt1
AFT05MS004Nt1 21 rf device data freescale semiconductor, inc.
22 rf device data freescale semiconductor, inc. AFT05MS004Nt1 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 july 2014 ? initial release of data sheet
AFT05MS004Nt1 23 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2014 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: AFT05MS004N rev. 0, 7/2014

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